Effect of initial substrate conditions on growth of cubic silicon carbide

In order to analyze the epitaxial growth of cubic silicon carbide by sublimation epitaxy on different substrates, four different 6H–SiC substrate preparations were used: (i) as-received, (ii) re-polished, (iii) annealed and covered by silicon layer and (iv) with (1 1 1) 3C–SiC buffer layer. Almost 100% coverage and low twin density was achieved when grown on the buffer layer. The XRD and TEM characterizations show better material quality when the layer is grown directly on 6H–SiC substrates. Background doping evaluated by LTPL is in the range of 1016 cm−3 for N and 1015 cm−3 for Al in all grown layers.