| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792371 | Journal of Crystal Growth | 2011 | 5 Pages |
The dislocation motion in Czochralski (Cz) silicon containing oxygen precipitates of different densities and sizes has been experimentally investigated in order to identify the strengthening mechanism of oxygen precipitates. The correlation of rosette sizes and oxygen precipitate densities and sizes was investigated quantitatively in terms of dispersion and precipitation strengthening mechanism. It is found that the precipitation strengthening mechanism is much more appropriate to account for the immobilization effect of oxygen precipitates on dislocations as compared to the dispersion strengthening mechanism.
► Dislocation glide distance in silicon subjected to different anneals was investigated. ► Correlation between rosette size and oxygen precipitate density and size was established. ► Applicabilities of dispersion and precipitation strengthening mechanisms were discussed. ► Strengthening effect of oxygen precipitates can be ascribed to precipitation strengthening.
