| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792384 | Journal of Crystal Growth | 2011 | 5 Pages |
Abstract
AlxIn1−xN films with 0.14 ► We study MOCVD growth condition dependence of AlInN growth on GaN. ► Surface, structural and impurity analyses to understand an optimal growth condition. ► SIMS shows higher carbon concentration with increasing growth pressure. ► Oxygen incorporation in AlInN is rather insensitive to growth conditions.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Roy B. Chung, Feng Wu, Ravi Shivaraman, Stacia Keller, Steven P. DenBaars, James S. Speck, Shuji Nakamura,