Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792401 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
Optical cavities have been fabricated by overgrowth of truncated GaAs pyramids with a distributed Bragg reflector. The success of this overgrowth depends strongly on the crystallographic orientation of the pyramid facets and shows best results for {114} A facets. In order to fabricate mesas with precisely such facets, a wet-chemical etching process including several selective etching steps has been established. To determine the optical properties of these resonators, InAs quantum dots have been used as an internal broad-band light source. The quality factors for optical modes have been determined to range up to 8000 and show a dependency on cavity width.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
D. Rülke, M. Karl, D.Z. Hu, D.M. Schaadt, H. Kalt, M. Hetterich,