| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792460 | Journal of Crystal Growth | 2011 | 7 Pages |
Abstract
⺠Growth of structure containing InGaN super-lattice sacrificial layer and InGaN QD. ⺠Dislocation generation within structure due to quantum dot growth. ⺠Unexpected formation of quantum dots within super-lattice during growth. ⺠Formulation of critical stack thickness model to account for dislocation generation with QD layer growth.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H.A.R. El-Ella, F. Rol, D.P. Collins, M.J. Kappers, R.A. Taylor, E.L. Hu, R.A. Oliver,