Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792499 | Journal of Crystal Growth | 2010 | 8 Pages |
Abstract
A chemically assisted vapour phase transport (CVT) method is proposed for the growth of bulk ZnO crystals. Thermodynamic computations have confirmed the possibility of using CO as a sublimation activator for enhancing the sublimation rate of the feed material in a large range of pressures (10â3 to 1 atm) and temperatures (800-1200 °C). Growth runs in a specific and patented design yielded single ZnO crystals up to 46 mm in diameter and 8 mm in thickness, with growth rates up to 400 μm/h. These values are compatible with an industrial production rate. N type ZnO crystals (μ=182 cm2/(V s) and n=7 1015 cmâ3) obtained by this CVT method (Chemical Vapour Transport) present a high level of purity (10-30 times better than hydrothermal ZnO crystals), which may be an advantage for obtaining p-type doped layers ([Li] and [Al] <10+15 cmâ3). Structural (HR-XRD), defect density (EPD), electrical (Hall measurements) and optical (photoluminescence) properties are presented.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jean-Louis Santailler, Claire Audoin, Guy Chichignoud, Rémy Obrecht, Belkhiri Kaouache, Pascal Marotel, Denis Pelenc, Stéphane Brochen, Jérémy Merlin, Isabelle Bisotto, Carole Granier, Guy Feuillet, François Levy,