Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792527 | Journal of Crystal Growth | 2010 | 6 Pages |
Abstract
We present in this work a simple quantum well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a metalorganic vapour phase epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low-temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (1 0 0). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable with those that can be obtained by molecular beam epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1 ppb level are needed to achieve high quality quantum well growth.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
V. Dimastrodonato, L.O. Mereni, R.J. Young, E. Pelucchi,