Article ID Journal Published Year Pages File Type
1792533 Journal of Crystal Growth 2010 5 Pages PDF
Abstract

In this paper numerical results on the impurity segregation in directional solidified multi-crystalline silicon are presented and compared with experimental results. A solute transport model has been established to predict the final segregation pattern of impurities in the ingot. The segregation is analyzed experimentally on the basis of Fourier transform infrared (FTIR) spectroscopy and glow-discharge mass spectrometry (GDMS). Precipitates were located by IR-transmission microscopy (IRM). Qualitative agreement between simulation and experiment is found. It is demonstrated how the flow pattern can influence the final solute distribution. The simulation also shows that the solubility limit of carbon and nitrogen is reached locally in the ingot and SiC and Si3N4 precipitates are likely to form.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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