Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792574 | Journal of Crystal Growth | 2010 | 5 Pages |
Abstract
Detailed structures of the etch pits on the (1Â 0Â 0), (0Â 1Â 0), and (0Â 0Â 1) surfaces of LiAlO2 single crystals have been studied. The crystal was grown by the Czochralski-pulling technique. Hot water is found to be a good etching solution for LiAlO2 crystal. On the (1Â 0Â 0) surface, many shallow rhomboidal etch pits with a deep rhombic pit at the center are revealed and can line up to form boundaries. These etch pits are categorized into two groups which are symmetric relative to the [0Â 1Â 0] direction and are separated by boundaries made up of dense etch pits. On the (0Â 0Â 1) surface, square pyramid-like etch pits are present. However, rectangle-like etch pits are found on the (0Â 1Â 0) surface, which may not be related to dislocations. The density and the distribution of dislocations are studied. A scheme of the domain structure is proposed to explain the observed shapes and distributions of etch pits.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Huichun Huang, Mitch M.C. Chou, Dershin Gan, Pouyan Shen,