Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792612 | Journal of Crystal Growth | 2010 | 6 Pages |
Single crystalline ZnO film was grown on (1 1 1) Si substrate through employing an oxidized CrN buffer layer by plasma-assisted molecular beam epitaxy. Single crystalline characteristics were confirmed from in-situ reflection high energy electron diffraction, X-ray pole figure measurement, and transmission electron diffraction pattern, consistently. Epitaxial relationship between ZnO film and Si substrate is determined to be (0 0 0 1)ZnO‖(1 1 1)Si and [1 1 2¯ 0]ZnO‖[0 1 1]Si. Full-width at half-maximums (FWHMs) of (0 0 0 2) and (1 0 1¯ 1) X-ray rocking curves (XRCs) were 1.379° and 3.634°, respectively, which were significantly smaller than the FWHMs (4.532° and 32.8°, respectively) of the ZnO film grown directly on Si (1 1 1) substrate without any buffer. Total dislocation density in the top region of film was estimated to be ∼5×109 cm−2. Most of dislocations have a screw type component, which is different from the general cases of ZnO films with the major threading dislocations with an edge component.