Article ID Journal Published Year Pages File Type
1792633 Journal of Crystal Growth 2011 4 Pages PDF
Abstract

A newly designed two-step reactor which places both chemical vapor deposition (CVD) and hydride vapor phase epitaxy (HVPE) in series is proposed to grow nonpolar m-plane GaN (1 0 −1 0) material on a closely lattice-matched (1 0 0) LiAlO2 single crystal substrate. The surface morphologies are characterized by scanning electron microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction, and the FWHM of GaN (1 0 −1 0) rocking curve is around 0.13°. Optical and electrical properties are evaluated by photoluminescence spectroscopy, optical transmission spectra and Hall measurement. Photoluminescence spectroscopy exhibited a near band edge emission peak at 3.410 eV. The carrier concentration is (3.9±0.01)×1018 cm−3.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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