Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792694 | Journal of Crystal Growth | 2010 | 8 Pages |
Abstract
A short review of the structural perfection of high-pressure grown bulk crystals is given. As-grown undoped and Mg-doped crystals are described. The dependence of defect arrangement and quality of the surface on growth polarity is described. A high perfection of homoepitaxial layers grown on these substrates is shown. However, growth of thick layers by HVPE may lead to the formation of differently arranged dislocations and the formation of low angle grain boundaries associated with cracks. It is shown that the introduction of dopant or growth of mismatched layers on undoped high-pressure substrates may lead to the formation of additional defects.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Z. Liliental-Weber,