| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792706 | Journal of Crystal Growth | 2011 | 8 Pages |
Abstract
In the present paper the effect of germanium doping in the range between 1016 and 1019Â cmâ3 on COP formation and oxygen precipitation is discussed and illustrated. Also the beneficial effect of germanium doping with respect to wafer breakage during processing, with respect to the suppression of thermal donor formation and with respect to improving device radiation hardness is addressed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Vanhellemont, J. Chen, J. Lauwaert, H. Vrielinck, W. Xu, D. Yang, J.M. RafÃ, H. Ohyama, E. Simoen,