Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792722 | Journal of Crystal Growth | 2011 | 6 Pages |
Abstract
Highly crystalline AlN films are deposited on Si substrate by the bombardment of charge particles emanating from plasma focus device. Deposition of AlN films are carried out for multiple focus shots at room temperature. Numbers of ions (1.3Ã1019-5.6Ã1019Â mâ3) are emitted during one focus shot. X-rays diffraction results reveal that an amorphous and crystalline AlN films are obtained for 1 and 3 focus shots, respectively. Crystallinity of AlN film increases up to 5 focus shots while it starts to decrease for 15 and 20 focus shots. The average crystallite size of AlN (1Â 0Â 0) phase increases from 33 to 140Â nm for 3-5 focus shots, whereas it starts to decrease from 26 to 22Â nm for 15-20 focus shots. Raman's spectroscopy exhibits the presence of A1 (TO) and E1 (TO) modes at â¼ 611 and â¼ 665Â cmâ1 positions respectively confirming the formation of AlN film. Fourier's transform infrared spectroscopy indicates the presence of strong absorption peak at â¼ 667Â cmâ1 position. Field emission scanning electron microscopic investigation reveals that different surface morphologies for different focus shots are observed which are mesh like but uniform for 1 shot, dense microstructure (rounded grains) for 3 shots, rough surface (large particulates) for 5 shots, rounded grains but dense microstructure for 15 shots and multi-layers formation showing rounded grains for 20 shots. Thickness of AlN film deposited for 1 focus shot is uniform and is about 190Â nm. Energy dispersive X-ray spectroscopic results show the presence of Al and N elements in AlN film deposited for 5 focus shots.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
I.A. Khan, R.S. Rawat, R. Verma, G. Macharaga, R. Ahmad,