Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792752 | Journal of Crystal Growth | 2010 | 5 Pages |
Abstract
InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) with different spacer layer structures were grown by metalorganic chemical vapor deposition. Fast-Fourier-transformed high-resolution transmission electron microscopy was used to determine the influence of the strain status in the spacer layer on Mg distribution and device performance. A comparison of the (1 1¯ 0 0) planar distance showed that the high-temperature grown InGaN layer in the spacer had a high level of stored strain. This led to the formation of a continuous facet contrast induced by Mg segregation in the p-layer, which was responsible for the deterioration of the electroluminescence performance of the LEDs. These results show that the delicate control of stored strain in nitride films is important for improving the device performance.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Bo Hyun Kong, Hyung Koun Cho, Mi Yang Kim, Rak Jun Choi, Bae Kyun Kim,