Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792753 | Journal of Crystal Growth | 2010 | 4 Pages |
Abstract
α-Si3N4 nanowires, β-SiC nanowires and SiO2 amorphous nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, activated carbon and silicon dioxide as the precursor. The α-Si3N4 nanowires, β-SiC nanowires and SiO2 amorphous nanowires are about 50–200 nm in stem diameter and 10–100 μm in length. α-Si3N4 nanowires and β-SiC nanowires consist of a solid single-crystalline core along the [0 0 1] and [1 1 1] directions, respectively, wrapped within an amorphous SiOx layer. The direct current arc plasma-assisted self-catalytic vapor–solid and/or vapor–liquid–solid (VLS) growth processes are proposed as the growth mechanism of the nanowires.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Qiushi Wang, Ridong Cong, Min Li, Jian Zhang, Qiliang Cui,