Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792756 | Journal of Crystal Growth | 2010 | 4 Pages |
Abstract
A new hydride vapor phase epitaxy (HVPE)-based approach for the fabrication of freestanding GaN (FS-GaN) substrates was investigated. For the direct formation of low-temperature GaN (LT-GaN) layers, the growth parameters were optimized: the polarity of ZnO, the growth temperature, and the V/III ratio. The FS-GaN layer was achieved by gas etching in an HVPE reactor. A fingerprint of Zn out-diffusion was detected in the photoluminescence measurements, especially for the thin (80 μm) FS-GaN film; however, a thicker film (400 μm) was effectively reduced by optimization of GaN growth.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Si-Young Kim, Hyun-Jae Lee, Seung-Hwan Park, Woong Lee, Mi-Na Jung, Katsushi Fujii, Takenari Goto, Takashi Sekiguchi, Jiho Chang, Gyungsuk Kil, Takafumi Yao,