Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792771 | Journal of Crystal Growth | 2010 | 5 Pages |
Abstract
The high dislocation density (2×107/cm2 for a thickness of 7 μm) in CdTe(2 1 1)B on Ge(2 1 1) has become a roadblock for the technological exploitation of this material. We present a systematic study of in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×106/cm2 was achieved by optimizing the growth conditions and annealing the samples in situ. This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
G. Badano, I.C. Robin, B. Amstatt, F. Gemain, X. Baudry,