| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792778 | Journal of Crystal Growth | 2010 | 6 Pages |
Abstract
The development of a ternary AlxIn1−xP shell grown around GaAs nanowires epitaxially grown in the [1¯1¯1¯] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {11¯0} macro facets with small (approx. 5 nm) {112¯} facets independent of the GaAs core side facets. Phase segregation is observed as AlP developing from the {112¯} facets, while Al0.5In0.5P is found in the rest of the ternary shell.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jakob B. Wagner, Niklas Sköld, L. Reine Wallenberg, Lars Samuelson,