Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792796 | Journal of Crystal Growth | 2010 | 4 Pages |
Abstract
The surface morphology of homoepitaxial (0 0 0 1)ZnO thin layers grown by halide vapor phase epitaxy (HVPE) using ZnCl2 and H2O source gases was investigated. Atomic force microscopy (AFM) observations showed that high temperature growth at 1000 °C with a low input H2O/ZnCl2 (VI/II) partial pressure ratio of 20 strongly promoted step-flow growth. X-ray diffraction (XRD) analyses revealed the crystalline quality of the homoepitaxial ZnO layer grown at 1000 °C with input VI/II ratio of 20 is comparable to that of bulk ZnO substrates. Under a constant input partial pressure of ZnCl2, the growth rate of ZnO is constant within the temperature range 700-900 °C, and the growth rate decreases above 900 °C due to the shift of thermodynamic equilibrium of the growth reaction.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Rui Masuda, Tetsuo Fujii, Naoki Yoshii, Yoshinao Kumagai, Akinori Koukitu,