Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792830 | Journal of Crystal Growth | 2010 | 4 Pages |
Abstract
We investigated the impact of an amorphous Ge (a-Ge) thin layer inserted at the amorphous Si (a-Si)/Al interface on Al-induced crystallization. In situ observation of the growth process clarified that the nucleation rate is drastically reduced by insertion of a-Ge, which led to increase in the average size of crystal grains. This was interpreted as resulting from decrease in the driving force of crystallization, mainly due to the larger solubility of Ge in Al than that of Si in Al. The obtained films were SiGe alloys with lateral distribution of Ge content, and its origin is discussed based on the two-step nucleation process.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hidehiro Suzuki, Noritaka Usami, Akiko Nomura, Toetsu Shishido, Kazuo Nakajima, Takashi Suemasu,