| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792886 | Journal of Crystal Growth | 2011 | 4 Pages |
We demonstrate electrical pumping of self-assembled InP/Ga0.51In0.49P quantum dots embedded in a p-i-n resonant-cavity-diode structure with emission in the red spectral region. A high aluminum containing Al0.98Ga0.02As layer allows wet thermal oxidation and implementation of a current restricting oxide aperture above the active region. The intended use of these InP-quantum dots in such a resonant-cavity-LED structure as a pulsed electrically driven single-photon emitter was confirmed by measuring the second order intensity correlation function g(2)(τ)g(2)(τ) with a Hanbury–Brown and Twiss type setup. The correlation measurements performed on a single quantum dot (≈40K) show a clear antibunching behavior (g(2)(0)<0.24g(2)(0)<0.24) up to 200 MHz as expected for a single-photon emitter.
