Epitaxial InP nanowire growth from Cu seed particles

Cu-seeded epitaxial growth of vertically aligned InP nanowires is reported for the first time. The nanowires were grown at temperatures between 290 and 420 °C by metal-organic vapor phase epitaxy (MOVPE) from particles formed from Cu thin films. In the temperature range of 340–370 °C high yields of vertically aligned nanowires could be achieved. The nanowire crystal structure and the particle composition were investigated by TEM and XEDS. The nanowires showed a zinc blende structure and a post-growth particle composition of 64 at% Cu and 36 at% In.