Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792896 | Journal of Crystal Growth | 2011 | 6 Pages |
Abstract
The influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4H–SiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Piotr Caban, Wlodek Strupinski, Jan Szmidt, Marek Wojcik, Jaroslaw Gaca, Ozgur Kelekci, Deniz Caliskan, Ekmel Ozbay,