Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792910 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
The growth rates and aluminium contents of AlxGa1−xN layers grown in a close-coupled showerhead reactor were investigated as a function of growth pressure and chamber height during metal-organic vapour phase epitaxy. The data show strong non-linear dependencies due to nanoparticle formation in the gas-phase. Good agreement between the experimental data and modeling results is obtained when the contribution of both Ga- and Al-containing species to the gas-phase particle formation is considered.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Stellmach, M. Pristovsek, Ö. Savaş, J. Schlegel, E.V. Yakovlev, M. Kneissl,