| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792921 | Journal of Crystal Growth | 2011 | 5 Pages |
Abstract
The material and device characteristics of InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition are examined. Two structures with different p-InxGa1−xN base region compositions, xIn=0.03 and 0.05, are presented in a comparative study. The higher indium content base is expected to provide improvements in device performance via its higher p-type doping efficiency and lower bulk resistivity. However, the DC gain for both devices is the same at ∼37. The tradeoffs involved with using higher indium composition in the base for NpN HBTs are investigated by atomic force microscopy, Hall-effect measurement, and device characterization.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Zachary Lochner, Hee Jin Kim, Suk Choi, Yi-Che Lee, Yun Zhang, Shyh-Chiang Shen, Jae-Hyun Ryou, Russell D. Dupuis,