| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792933 | Journal of Crystal Growth | 2010 | 4 Pages |
Abstract
Semi-insulating Cd0.9Zn0.1Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490–717 °C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a 137Cs radioactive source, gave an energy resolution of 2.5%.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K.H. Kim, R. Gul, V. Carcelén, A.E. Bolotinkov, G.S. Carmarda, G. Yang, A. Hossain, Y. Cui, R.B. James, J. Hong, S.U. Kim,