Structural, electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

SnO2 films have been deposited on Y-stabilized ZrO2 (YSZ) (1 0 0) substrates at different substrate temperatures (500–800 °C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 °C are epitaxial SnO2 films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO2(1 0 0)||YSZ(1 0 0). The films deposited at 700 and 800 °C have mixed-phase structures of rutile and columbite SnO2. The carrier concentration of the films is in the range from 1.15×1019 to 2.68×1019 cm−3, and the resistivity is from 2.48×10−2 to 1.16×10−2 Ω cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO2 films is about 3.75–3.87 eV.