Selective etching of dislocations in GaN grown by low-pressure solution growth

This work presents an experimental study on the identification and quantification of different types of dislocations in GaN grown by low-pressure solution growth. A reliable defect selective etching procedure in a NaOH-KOH melt is developed and validated using transmission electron microscopy that permits to define groups of etch pits that belong each to dislocations with a specific Burgers vector. This way a comparably fast method is provided for determining the total, the specific dislocation densities and the type of dislocation in a statistically representative way. The results for the solution grown samples are compared to those obtained for MOCVD GaN.