Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793066 | Journal of Crystal Growth | 2010 | 5 Pages |
Abstract
Epitaxial wurtzite InN thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) SrTiO3SrTiO3 (STO) substrates. Interestingly, twin domain epitaxy induced by the surface reconstruction of STO is observed with the in-plane orientation relationships of [1¯100]InN∥[1¯10]STO and [21¯1¯0]InN∥[1¯10]STO, which is helpful to release the strain. The InN films on STO substrates exhibit a strong photoluminescence emission around 0.78 eV. Particularly, using STO substrates opens up a possibility to integrate InN with the functional oxides.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C.H. Jia, Y.H. Chen, X.L. Zhou, G.H. Liu, Y. Guo, X.L. Liu, S.Y. Yang, Z.G. Wang,