Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793067 | Journal of Crystal Growth | 2010 | 4 Pages |
Abstract
We fabricated epitaxial SrB6 (1 0 0) thin films on ultrasmooth sapphire (α-Al2O3 single crystal) (0 0 0 1) substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of SrB6 (1 0 0)/sapphire (0 0 0 1) with three domains of epitaxial relationship. The prepared films exhibited atomically stepwise surface morphology, similar to that of the ultrasmooth substrate used, with 0.2-nm-high atomic steps and ∼70-nm-wide terraces. The SrB6 epitaxial thin films showed semiconducting behavior, with a resistivity of 4.8 Ω cm at room temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y. Kato, N. Shiraishi, N. Tsuchimine, S. Kobayashi, M. Yoshimoto,