Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793079 | Journal of Crystal Growth | 2010 | 5 Pages |
Abstract
The post growth annealing of InAs quantum dots (QDs) at relatively high temperature was investigated by an in-situ stress cantilever beam setup. For samples annealed at 500âC, stress accumulated during QD formation relaxes below the value which was built-up during wetting-layer growth. AFM images taken at different annealing stages reveal that QDs ripen first and then dissolve within 10Â min of annealing. These observations are explained by a combination of In desorption, especially at the beginning of annealing, and interdiffusion between Ga and In.
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Authors
D.Z. Hu, A. Trampert, D.M. Schaadt,