Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793090 | Journal of Crystal Growth | 2010 | 9 Pages |
Abstract
GaN structures have been grown by selective area growth (SAG) in an atmospheric hydride vapour phase epitaxy (HVPE) reactor on c-plane sapphire and metal organic vapour phase epitaxy (MOVPE) grown GaN/c-plane sapphire substrates. The substrates were patterned in two perpendicular crystallographic directions 〈1 1 −2 0〉 and 〈1 −1 0 0〉. The growth morphologies of the GaN stripes were systematically investigated by scanning electron microscopy (SEM). A complete cartography of GaN SAG was established, after varying the growth temperature and the V/III ratio on both types of substrate. The cartography permits to fix the appropriate parameters for growing GaN quasi-substrates or GaN nano-structures with controlled morphology.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
O. Chelda-Gourmala, A. Trassoudaine, Y. André, S. Bouchoule, E. Gil, J. Tourret, D. Castelluci, R. Cadoret,