| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793180 | Journal of Crystal Growth | 2010 | 6 Pages |
Abstract
Growth interface of large diameter CdZnTe ingots grown from Te solution by travelling heater method have been studied. Both macroscopic and microscopic investigations were carried out. The results indicated that the shape of the interface strongly governs the grain growth on the ingot, while the microscopic morphology of the growth interface is responsible for Te inclusions in the grown crystal.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
U.N. Roy, S. Weiler, J. Stein,