Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793189 | Journal of Crystal Growth | 2010 | 4 Pages |
Abstract
Well-crystallized straight Si nanowires (SiNWs) were successfully prepared in large scale via a facile reaction between NaN3 and Na2SiF6 at 600 °C without using any catalyst. Characterization by X-ray powder diffraction and transmission electron microscopy demonstrates that the as-obtained product is pure-phase cubic SiNWs with diameters of 40 nm or so, and lengths of several micrometers. And the SiNWs with spherical tips can be obtained at a temperature as low as 300 °C. Heating temperature and holding time have crucial influence on the synthesis and morphology of the SiNWs. An oxide-assisted growth mechanism is responsible for the formation of the SiNWs.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hui-Ling Zhu, Ning Lun, Zheng Zhang, Rui Liu, Xiang-Lin Meng, Bo Zhang, Fu-Dong Han, Yu-Jun Bai, Jian-Qiang Bi, Run-Hua Fan,