Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793191 | Journal of Crystal Growth | 2010 | 4 Pages |
Abstract
Heteroepitaxial ZnO films were grown by pulsed laser deposition on various substrates such as GaN-buffered C-Al2O3, C-Al2O3, A-Al2O3, and R-Al2O3. The epitaxy nature of the films was investigated mainly by synchrotron X-ray diffraction. The results showed that the GaN interlayer plays a positive role in growing an unstrained, well-aligned epitaxial ZnO film on the basal plane of Al2O3. Importantly, the ZnO film grown on R-Al2O3 has two differently aligned domains. The dominant (1 1 0) oriented domain has much better alignment in the in-plane direction than the minor portion of (0 0 1) oriented domain, while in the out-of-plane direction the two domains have almost the same mosaic distribution.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jae Young Park, Jung Ho Je, Sang Sub Kim,