Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793212 | Journal of Crystal Growth | 2010 | 5 Pages |
Abstract
The authors report the formation of two-dimensional InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (3 1 1)B substrates by chemical-beam epitaxy (CBE). The SL template and InAs QD growth conditions are studied in detail for optimized QD ordering. Excellent photoluminescence emission up to room temperature is achieved from buried QD arrays. The emission wavelength is tuned from above 1.9 μm to the 1.55 μm telecom wavelength region through the insertion of ultrathin GaAs interlayers beneath the QD arrays.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
N. Sritirawisarn, F.W.M. van Otten, P.E.D. Soto Rodriguez, J.L.E. Wera, R. Nötzel,