Epitaxial growth of ZnO films on thin FeO(1 1 1) layers

Thin FeO(1 1 1) buffer layers prepared on Mo(1 1 0) substrate were used to grow ordered ZnO films under ultrahigh vacuum condition, and were in situ characterized by various surface analytical techniques. A chemical interaction between Zn (or ZnO) and FeO(1 1 1) can effectively lower the interfacial energy, which is in favor of an epitaxial growth of ZnO on FeO layers. Compared with the MgO(1 1 1) buffer layer used for the growth of ZnO(0 0 0 1) on sapphire (0 0 0 1) surface, the FeO(1 1 1) thin films might be a better one because it is more thermally stable. Our experimental results provide constructive information on the growth mechanism of ZnO-based materials, which is helpful for further understanding the growth mechanism of related oxide materials.