Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793295 | Journal of Crystal Growth | 2009 | 5 Pages |
Abstract
The nanocrystalline alpha silicon nitride (α-Si3N4) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 °C under 4 and 40 Torr at the wire temperatures of 1430 and 1730 °C, with a gas mixture of SiH4 and NH3. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si3N4 nanoparticles increased, but the deposition rate decreased.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Chan-Soo Kim, Woong-Kyu Youn, Dong-Kwon Lee, Kwang-Soo Seol, Nong-Moon Hwang,