Article ID Journal Published Year Pages File Type
1793295 Journal of Crystal Growth 2009 5 Pages PDF
Abstract

The nanocrystalline alpha silicon nitride (α-Si3N4) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 °C under 4 and 40 Torr at the wire temperatures of 1430 and 1730 °C, with a gas mixture of SiH4 and NH3. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si3N4 nanoparticles increased, but the deposition rate decreased.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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