Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793308 | Journal of Crystal Growth | 2010 | 6 Pages |
Abstract
Thermal decomposition of Lewis acid–base adducts [t-Bu3Ga-Sbi-Pr3] (1) and [t-Bu3Ga]2[Sb2Et4] (2) in closed glass ampoules at temperatures between 250 and 350 °C yielded crystalline GaSb nanowires. Isolated GaSb nanowires were formed preferably at low decomposition temperatures, whereas dendritic-like growth was observed at higher decomposition temperatures. In addition, self-catalyzed growth of GaSb nanowires using 90 nm-sized Ga droplets, which were pre-deposited on Si(1 0 0) substrates, was achieved with the distibine Sb2Et4 at 250 °C.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Stephan Schulz, Marcel Schwartz, Andreas Kuczkowski, Wilfried Assenmacher,