Article ID Journal Published Year Pages File Type
1793319 Journal of Crystal Growth 2010 4 Pages PDF
Abstract

A systematic study on structural and morphological properties of gallium selenide (GaSe) single crystals grown by vertical Bridgman technique is reported. A hexagonal structure of GaSe with lattice parameters a=b=3.74909 Å and c=15.90698 Å has been confirmed with the help of powder X-ray diffraction (XRD). Respective values of strain (3.43×10−4 lin−2 m−4) and dislocation density (1.35×1014 lin m−2) have been calculated using powder X-ray diffraction results. High resolution X-ray diffraction (HRXRD) has been performed to ascertain the crystalline perfection of the grown single crystal. The scanning electron microscopy (SEM) and powder X-ray diffraction results are in good agreement as far as the grain size of the grown gallium selenide (GaSe) crystal is concerned.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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