Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793322 | Journal of Crystal Growth | 2010 | 6 Pages |
Abstract
4 wt% Ga-doped ZnO (GZO) thin films have been prepared on the buffered and non-buffered Al2O3 (0 0 0 1) substrates by RF magnetron sputtering technique at a low growth temperature (250 °C). The effect of a ZnO buffer layer on the crystallinity, optical, and electrical properties of the GZO thin films is investigated. X-ray diffraction and transmission electron microscopy studies showed that the GZO thin film on a buffered substrate was epitaxially grown at a low growth temperature of 250 °C with an orientation relationship of (0001)[112¯0]GZO||(0001)[112¯0]Al2O3. However, the GZO thin film on a non-buffered substrate was grown as a polycrystalline hexagonal wurtzite phase with c-axis preferred, out-of-plane orientation, and random in-plane orientation. The optical transmittance in the visible region and the electrical resistivity of the GZO thin film was improved by introducing a ZnO buffer layer from 70% to 80% and from 4.69Ã10â3 to 1.01Ã10â3 Ω cm, respectively.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Seung Wook Shin, Kyu Ung Sim, S.M. Pawar, A.V. Moholkar, In Ok Jung, Jae Ho Yun, Jong-Ha Moon, Jin Hyeok Kim, Jeong Yong Lee,