Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793325 | Journal of Crystal Growth | 2010 | 5 Pages |
Abstract
An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
B. Gao, X.J. Chen, S. Nakano, K. Kakimoto,