Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793354 | Journal of Crystal Growth | 2009 | 7 Pages |
Abstract
The growth and characterization of epitaxial Co3O4(111) films grown by oxygen plasma-assisted molecular beam epitaxy on single crystal α-Al2O3(0001) is reported. The Co3O4(111) grows single crystalline with the epitaxial relation Co3O4(111)[1¯21¯]âα-Al2O3(0001)[101¯0], as determined from in situ electron diffraction. Film stoichiometry is confirmed by X-ray photoelectron spectroscopy, while ex situ X-ray diffraction measurements show that the Co3O4 films are fully relaxed. Post-growth annealing induces significant modifications in the film morphology, including a sharper Co3O4/α-Al2O3 interface and improved surface crystallinity, as shown by X-ray reflectometry, atomic force microscopy and electron diffraction measurements. Despite being polar, the surface of both as-grown and annealed Co3O4(111) films are (1Ã1), which can be explained in terms of a surface inversion in the spinel structure.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C.A.F. Vaz, V.E. Henrich, C.H. Ahn, E.I. Altman,