Article ID Journal Published Year Pages File Type
1793378 Journal of Crystal Growth 2009 7 Pages PDF
Abstract
Epitaxial GaAsSb (0 0 1) semiconductor alloys grown by metalorganic vapor phase epitaxy exhibit several spontaneously ordered structures. A superlattice structure with three-fold ordering in the [1 1 0] direction has been previously observed by different groups. CuAu structures with (1 0 0) and (0 1 0) ordering planes have also been reported. The physical origin of CuAu ordering in III-V semiconductors has not yet been explained. In this work we report the effect of growth conditions on CuAu ordering in GaAsSb, including miscut from (0 0 1), growth rate, bismuth surfactant concentration, and growth temperature. These data point to a surface kinetic mechanism not based on dimer strain, but possibly due to one-dimensional ordering at step edges.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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