Single crystal growth of InBi1−xSex by syringe pulling method

In recent years, III–V compounds have received some attention as potential candidates for infrared application in the 8–12 μm range. Single crystal of InBi:Se belonging to the same system has been grown by Syringe pulling method. The charge was allowed to cool freely to room temperature, which took about 10 min. The stainless steel needle serves as heat sink and site of nucleation. Crystals were cleaved along the cleavage plane (0 0 1) parallel to the vertical growth axis. Growth features were studied on the surface of crystals. XRD technique has been used for testing the presence of constituent element of InBi:Se single crystal. Standard test for a new dislocation etchant has been carried out successfully and results are reported. The optical absorption was measured in the wave number range 500–4000 cm−1. The bandgap has been evaluated from these data and studied as a function of concentration. The increase in concentration has been also found to affect their hardness.