| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793516 | Journal of Crystal Growth | 2010 | 5 Pages |
Abstract
Three-dimensional numerical simulations were carried out for the dissolution process of silicon into germanium melt with and without the application of a static vertical magnetic field under the same conditions of experiments. The computed concentration fields in the melt show similar structures to the experimentally measured concentration profiles from the samples processed. The application of magnetic field makes the concentration profiles smoother.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Kidess, N. Armour, S. Dost,