Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793520 | Journal of Crystal Growth | 2010 | 4 Pages |
Abstract
Because the interest is to grow crystals with specified gap size, the ÎP limits and the corresponding menisci shapes for which dewetting is feasible are first established, on the base of the theoretical and computational investigations. Then, for the obtained menisci, the static stability via the conjugate point criterion of the calculus of variations is studied in the cases of the classical semiconductors grown in (i) uncoated crucibles (i.e., the wetting angle θc and growth angle αe satisfy the inequality θc+αe<180â) and (ii) coated crucibles or pollution (θc+αeâ¥180â). In this way, gap thickness limitations for which the menisci are physically realizable are obtained. Numerical results are performed for InSb crystal grown in uncoated ampoule, and for Ge crystal grown in coated ampoule.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L. Braescu,