| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793539 | Journal of Crystal Growth | 2009 | 5 Pages |
Abstract
Pr-doped ZnO (ZnO:Pr) insulating thin films were prepared on glass and Si substrates by oxidation in air. The films were characterised by X-ray diffraction (XRD), energy dispersion X-ray fluorescence (EDXRF), and optical absorption spectroscopy. The molar ratio Pr/Zn of the samples was determined by the EDXRF method. The XRD study shows the formation of nanocrystalline (26-50Â nm) nc-Pr-doped ZnO. The optical and electrical conduction were explained by a slight change of stoichiometric composition. The nc-ZnO:Pr/Si heterojunctions are being Schottky barrier diodes (SBDs) and exhibited high rectification behaviour. The parameters describe the current pass through those SBDs were determined according to the available models.
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Authors
A.A. Dakhel,