Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793540 | Journal of Crystal Growth | 2009 | 5 Pages |
Abstract
Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2¯ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p–n junction solar cells or diodes.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
SeongHo Jeong, Eray S. Aydil,